High Temperature1GB 4GB Bulk Flash Memory for Downhole Drilling for Oil and Gas Application

Product Details

High temperature1GB/4GB bulk flash memory for downhole drilling oil and gas application

● Name:’Supreme’ high temperature flash memory

● With high temperature, small volume, large density, fast reading rate and rare error

Main technical parameters:

Working temperature: -45℃~+175℃

Selectable density: 1GB and 4GB

Product introduction:

“Supreme” high temperature memory is NAND type general memory with high reliability, good performance and fast writing and reading under high and low temperature.

Product characteristics:

● Working temperature scope: ﹣40℃ ~ ﹢175℃

● The maximum working current: 90mA

● Standby current: <2mA

● Power supply voltage Vcc (V):2.7 V ~ 3.6 V

● Input high level(V): 0.8Vcc ~ Vcc+0.3

● Input low level(V): -0.3 ~ 0.2Vcc

● Output high level(V): 2.4 ~ Vcc

● Output low level(V): -0.3 ~ 0.4

● Encapsulation: 16 PIN DIP

Product application:

Oil drilling

Geological exploration

Model:

●LHDS1GA

Product introduction

LHDS1GA high temperature memory is NAND type general memory with high reliability, good performance and fast writing and reading under severe environment of -45℃~175℃.

Technical parameters

Working temperature scope:﹣45℃ ~ ﹢175℃

Power supply voltage Vcc(V): 2.7 V ~ 3.6 V

Input high level(V): 0.8Vcc ~ Vcc+0.3

Input low level(V): - 0.3 ~ 0.2Vcc

Output high level(V):2.4 ~ Vcc

Output low level(V):-0.3 ~ 0.4

Encapsulation: 16 PIN DIP (15.5 x 21.6 /2.54 mm space)

Structural density

The 1GB memory module  includes 4,096 blocks, each block contains 128 pages and each page includes 2112 bytes(2K+64). The programming and reading operation all base on page as units and erase operation bases on block as unit as well.

The address bus of LDMF1GA reuses 8 I/O interfaces. Physical space needs 30 addresses, thus five cycles are needed for addressing : two for column address to address specific of each ;3 cycles are used for row address to address the specific page of block. Page write and progress need five same address cycles and execute after inputting the required commands . In erase operation of block, only three row addresses are used. The operation of device is selected by writing commands into writing register.

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●LHDS4GA

Product introduction

LHDS4GA high temperature memory is NAND type general memory with high reliability, good performance and fast writing and reading under severe environment of -45℃~175℃.

Technical parameters

Working temperature scope:﹣45℃ ~ ﹢175℃

The maximum working current:    90mA

Standby current:<2mA

Power supply voltage Vcc(V):2.7 V ~ 3.6 V

Input high level(V): 0.8Vcc ~ Vcc+0.3

Input low level(V): -0.3 ~ 0.2Vcc

Output high level(V): 2.4 ~ Vcc

Output low level(V):-0.3 ~ 0.4

Encapsulation: 16 PIN DIP (45mm x 28mm x 5mm)

Structural density

The 4GB memory module  includes 4,096 blocks, each block contains 128 pages and each page includes 8640 bytes(data section of 8192+stanby section of 448). The programming and reading operation all base on page as units and erase operation bases on block as unit.

At most five cycles are needed for addressing : two for column address to address specific of each ;3 cycles are used for row address to address the specific page of block. Due to different units, writing operation uses five address cycles and programming operation uses five address cycles, in which the byte address is 0, erase operation uses three address cycles, in which the page address is 0.

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We are well-known as one of the leading General- Thick Film Hybrid IC manufacturers in China. If our high temperature1gb 4gb bulk flash memory for downhole drilling for oil and gas application caters to your requirement, please be free to buy our quality products made in China with competitive price. And the customized service as well as excellent after-sale service are available.

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